Harvey, You are as persistent and tenacious as I am, or moreso. I was wrong when I said that reverse-breakdown of B-E junctions was not commonly used except in some rare noise generator circuits. I was right when I said they are quite fragile and easily destroyed. I was right when I said there is no such bipolar transistor data sheet term "reversing threshold". I was right when I said that reverse breakdown characteristics are not frequency dependent. Regarding fragility...from your own source quotes below cut and pasted... Remember, this whole little debate started when I challenged wattsup to show me the words "reversing threshold" on any transistor data sheet and to show me where any such reverse-bias breakdown was "frequency sensitive". Then it evolved into a broader discussion regarding the fragility of reverse-breakdown operation in garden-variety transistors like the 2N2222. Then it became a debate on whether such features as reverse breakdown operation were common or rare. In the early stages, I apologized to Wattsup for jumping on him and said we might have just misunderstood each other. I admitted even to being a jerk and an asshole. He's been prickly (read that PRICK-FACED) toward anything and everything I've had to say ever since and made rude comments, dismissing me as ignorant and not worth wasting time with. Others obviously disagree. [EDIT...but I'm sure my outright arrogance and pushy, sarcastic argumentitive personality will eventually piss off everyone here]  I stand corrected on the usage of the reverse breakdown B-E junction in modern circuits (many of which I have used myself without even noticing...like in precision references, etc.). You got me there, and Milehigh, too, I think. I stand pat on the rest of it. And yes, I have learned from all of it. So there! Take that!  I do appreciate your mediation and your patience and the time you've spent googling references. Thank you. Humbugger
« Last Edit: 2011-02-19, 18:58:13 by humbugger »
|