The two proposed circuits are not capable of adequately driving a Power MosFet. The input capacitance of the power MosFet demands a very rapid charge current which can easily exceed two Amperes at turn-on and , similarly, a very rapid discharge current of the same magnitude at turn-off. Unless the MosFet is adequately driven at its Gate it will be vulnerable to "burn-out" due to excessive time spent in its linear region as it transitions from OFF to ON and then back to OFF. The only way to assure that a Power MosFet is driven with sufficient "oomph" to produce the fastest possible full turn-on and full turn-off is by means of a Driver Chip. To obtain the kind of isolation you're seeking you may make use of a newly available chip by Analog Devices: Datasheet attached. Here is the promotional video which explains its characteristics.
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Topic: TK sidethread to that at OU.com (Read 5943 times)
